PATENTS

 

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BOOKS       

 

QWIP 2006--Special Issue of Infrared Physics & Technology

 

Frontiers of Thin Film Technology

 

Semiconductor Optical & Electro-Optical Devices

      

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INVITED BOOK CHAPTERS

125.       "Quantum Dot Structures for Multi-Band Infrared and Terahertz Radiation Detection" (G. Ariyawansa and A. G. U. Perera) “Handbook of Self Assembled Semiconductor Nanostructures Novel Devices in Photonics and Electronics", edited by M. Henini,  Elsevier Limited 2007

124.         "Quantum Structures For Far-Infrared Detection" (A. G. U. Perera and S.G. Matsik)  "Intersubband Infrared Photodetectors", (ISBN 981-238-308-5) edited by V.Ryzhii,  229-280, Academic press 2002.

123.         Silicon and GaAs as Far-infrared Detector Material” (A. G. U. Perera)  “Photodetectors and Fiber Optics”, (ISBN 0-12-513908-x) edited by H. S. Nalwa, 204-234, Academic Press 2001.

122.         “Semiconductor Photoemissive Structures For Far Infrared Detection” (A. G. U. Perera) “Handbook of Thin Film Devices", (ISBN 0-12-550760-7)  co-editors, A. G. U. Perera and H. C. Liu , Maurice H. Francombe, Vol 2,  135-167, San Deigo,  Academic press  2000.

121.        "Quantum Well Devices For Infrared Emission" (A. G. U. Perera, J. -W. Choe and M. H. Francombe)  "Physics of Thin films", editors, J. Vossen and M. H. Francombe, Volume 23, 217-298, San Diego, Academic press 1998.

120.         "Physics and Novel Device Applications in Semiconductor Homojunctions", (A. G. U. Perera)  "Physics of Thin Films", editors, J. Vossen and M. H. Francombe, Volume 21, 1-75, San Diego, Academic press 1995.      

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JOURNAL ARTICLES

119.    "Simultaneous detection of ultraviolet and infrared radiation in a single GaN/GaAlN heterojunction", (Ranga C. Jayasinghe, Gamini Ariyawansa, Nikolaus Dietz, A. G. Unil Perera, Steven G. Matsik, Hongbo B. Yu, Ian T. Ferguson, Andrew Bezinger, Sylvain R. Laframboise, Margaret Buchanan, and Hui Chun Liu), Optics Letters Vol. 33, Iss. 21, pp. 2422–2424 (2008). (Full paper in PDF format)


118.    "Dopant Migration-Induced Interface Dipole Effect in n-Doped GaAs/AlGaAs Terahertz Detectors", (Jit, S.; Weerasekara, A. B.; Jayasinghe, R. C.; Matsik, S. G.; Perera, A. G. U.; Buchanan, M.; Sproule, G. I.; Liu, H. C.; Stintz, A.; Krishna, S.; Khanna, S. P.; Lachab, M.; Linfield, E. H.), Electron Device Letters, IEEE, Volume 29, Issue 10, (2008). (Full paper in PDF format)

 

117.    "Self-consistent performance modeling for dualband detectors", (S.G. Matsik, A.G.U. Perera), J. Appl. Phys. 104, 044502 (2008).(Full paper in PDF format)

 

116.     “Room Temperature Nano and Micro Structure Photon Detectors”, (A.G.U. Perera,  P.V.V. Jayaweera, G. Ariyawansa, S.G. Matsik, K. Tennakone, M. Buchanan, H.C. Liu, X.H. Su and P. Bhattacharya), Microelectronics Journal (in press). (Full paper in PDF format)

 

 

115.    “Uncooled infrared detectors for 3-5 µm and beyond”, (P.V.V. Jayaweera, S. G. Matsik, A. G. U. Perera,  H. C. Liu, M. Buchanan and Z. R. Wasilewski), Appl. Phys. Lett. 93, 021105 (2008). (Full paper in PDF format)

 

114.     “Bias-selectable tri-color tunneling quantum dot infrared photodetector for atmospheric windows”, (G. Ariyawansa, V. Apalkov, A. G. U. Perera, S. G. Matsik, G. Huang, and P. Bhattacharya), Appl. Phys. Lett.92, 111104 (2008). (Full paper in PDF format)

 

113.    Optical properties of n-doped Ga1−xMnxN epitaxial layers grown by metal-organic chemical-vapor in mid and far "5-50 _m… IR range”, (A. B. Weerasekara, Z. G. Hu, N. Dietz,  A. G. U. Perera, A. Asghar,  M. H. Kane, M. Strassburg and I. T. Ferguson), J. Vac. Sci. Technol. B 26(1) 52-55 Jan/Feb (2008). (Full paper in PDF format)  

 

112.    Sensitization of TiO2 and ZnO nanocrystalline films with acriflavine”, (M.K.I. Senevirathne, P.K.D.D.P. Pitigala, V. Sivakumar,    P.V.V. Jayaweera, A.G.U. Perera and K. Tennakone), Journal of Photochemistry and Photobiology A: Chemistry, 195, 364-367,(2008). (Full paper in PDF format

 

111.    A Multi-Color Quantum Dot Intersublevel Detector with Photoresponse in the Terahertz Range, (G. Huang, J. Yang and P. Bhattacharya, G. Ariyawansa and A. G. U. Perera), Appl. Phys. Lett. 92, 011117, (2008). (Full paper in PDF format)

110.    "Semiconductor Terahertz Detectors and Absorption Enhancement Using Plasmons", (A. G. U. Perera, G. Ariyawansa, P. V. V. Jayaweera, S. G. Matsik, M. Buchanan and H. C. Liu), Microelectronics Journal, MEJ2237, 39, 601-606, (2008). (Full paper in PDF format)

109.     "Why Gratzels cell works so well" (P.V.V. Jayaweera, A.G.U. Perera and K. Tennakone) Inorganica Chimica Acta, 361(3), 707-711, February (2008),  (Full paper in PDF format)  

108.    High-Temperature Tunneling Quantum-Dot Intersublevel Detectors for Mid-Infrared to Terahertz Frequencies” (P. Bhattacharya, Xiaohua Su, G. Ariyawansa, A. G. U. Perera), Proceedings of the IEEE 95, 1828– 1837 (2007). (Full paper in PDF format)

107.    "Displacement currents in semiconductor quantum dots embedded dielectric media: A method for room temperature photon detection", (P. V. V. Jayaweera, A. G. U. Perera, and K. Tennakone) Applied Physics Letters 91, 063114-3, (2007).(Full paper in PDF format)

106.    "Dual-band pixelless upconversion imaging devices", (L. K. Wu, H. L. Hao, W. Z. Shen, G. Aeiyawansa, A. G. U. Perera, and S. G. Matsik), Optics Letters, 32 2366-2368, (2007) (Full paper in PDF format)

105.    "Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition." (R. P. Bhatta, B. D. Thomas, A. Weerasekera, A. G. U. Perera, M. Alevli, and N. Dietz) J. Vac. Sci. Technol. A 25(4) 967-970 July (2007) (Full paper in PDF format)

104.    "Wavelength and Polarization Selective Multi-Band Tunneling Quantum Dot Detectors", (A. G. U. Perera, G. Ariyawansa, V. M. Apalkov, S. G. Matsik, X. H. Su, S. Chakrabarti, and P. Bhattacharya), Opto-Electron. Rev., 15(4), 223–228 (2007).(Full paper in PDF format)

103.    Infrared optical anisotropy of diluted magnetic Ga1-x MnxN/c –sapphire epilayers with a GaN buffer layer by metaloorganic chemical vapor deposition.” (Z. G. Hu,  A. B. Weerasekara,  N. Dietz  A. G. U. Perera,  M. Strassburg,  M. H. Kane, A. Asghar and I. T. Ferguson) PRB. 75, 205320 (2007)  (Full paper in PDF format)  

102.      "n-type GaAs/AlGaAs Heterostructure detector with a 3.2 THz threshold frequency (A. B. Weerasekara, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, M. Buchanan, H. C. Liu, G. von Winckel, A. Stintz, and S. Krishna) Optics Letters, 32 (10), 1335-1337, (2007) (Full paper in PDF format).

101.             GaSb homojunctions for Far-IR (THz) Detection(P. V. V. Jayaweera, S. G. Matsik, and A. G. U. Perera, Y. Paltiel, Ariel Sher and Arie Raizman, H. Luo, and H. C. Liu), Applied Physics Letters, 90, 111109, (2007) (Full paper in PDF format)

100.      Effects of a p–n junction on heterojunction far infrared detectorsS.G. Matsik, M.B.M. Rinzan, A.G.U. Perera, H.H. Tan, C. Jagadish and H.C. LiuInfrared Physics & Technology, 50, 274-278 (2007) (Full paper in PDF format)

99.        Quantum mechanical effects in internal photoemission THz detectors (M.B. Rinzan, S. Matsik and A.G.U. Perera) Infrared Physics & Technology, 50,199-205 (2007) (Full paper in PDF format)

98.         Performance improvements of ultraviolet/infrared dual-band detectors” (A.G.U. Perera, G. Ariyawansa, M.B.M. Rinzan, M. Stevens, M. Alevli, N. Dietz, S.G. Matsik, A. Asghar, I.T. Ferguson, H. Luo et al.) Infrared Physics & Technology, 50, 142-148 (2007) (Full paper in PDF format)

97.        Multi-color tunneling quantum dot infrared photodetectors operating at room temperature (G. Ariyawansa, A.G.U. Perera, X.H. Su, S. Chakrabarti and P. Bhattacharya) Infrared Physics & Technology, 50,156-161 (2007) (Full paper in PDF format)

96.        1/f Noise in dye-sensitized solar cells and NIR photon detectors” (P.V.V. Jayaweera, P.K.D.D.P. Pitigala, M.K.I. Seneviratne, A.G.U. Perera and K. Tennakone) Infrared Physics & Technology, 50, 270-273 (2007) (Full paper in PDF format)

95.         Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity” (A.B. Weerasekara, M.B.M. Rinzan, S.G. Matsik, A.G.U. Perera, M. Buchanan, H.C. Liu, G. von Winckel, A. Stintz and S. Krishna) Infrared Physics & Technology, 50,194-198 (2007) (Full paper in PDF format)

94.         "Spin split-off transition based IR detectors operating at high temperatures"  (P.V.V.   Jayaweera, S.G. Matsik, K. Tennakone, A.G.U. Perera, H.C. Liu and S. Krishna ) Infrared Physics & Technology, 50, 279-283 (2007) (Full paper in PDF format)

93.         "Optical Studies of MOCVD grown GaN based ferromagnetic semiconductorepilayers and devices"(M. H. Kane, M. Strassburg, W. E. Fenwick, A. Asghar, J. Senawiratne, D. Azamat, Z. Hu, E. Malguth, S. Graham, U. Perera, W. Gehlhoff, A. Hoffmann, N. Dietz, C. J. Summers, I. T. Ferguson) Physica Status solidi, 3 (6), 2237-2240 ( 2006) (Full paper in PDF format)

92.         "Quantum structures for multiband photon detection" (A.G.U. Perera) Opto-Electronics Review, 14 (2), 103-112, (2006) (Full paper in PDF format)

91.          “High Operating Temperature Split-off Band Infrared Detectors (A. G. U. Perera, S. G. Matsik, P. V. V. Jayaweera, K. Tennakone, H. C. Liu, M. Buchanan G. Von Winckel, A. Stintz, and S. Krishna) Appl.Phys.Lett., 89, 131118, (2006) (Full paper in PDF format)

90.         “The Characterization of InN layers grown by high-pressure chemical vapor deposition (M. Alevli, G. Durkaya, W. Fenwick, A. Weerasekara, V. Woods, I. Ferguson, U. Perera and N. Dietz)  Appl.Phys.Lett., Lett. 89, 112119, (2006) (Full paper in PDF format

89.         GaN/AlGaN heterojunction infrared detector responding in 8-14 µm and 20-70 µm ranges” (G. Ariyawansa, M. B. M. Rinzan, M. Strassburg, N. Dietz , A. G. U. Perera, S. G. Matsik, A. Asghar, I. T. Ferguson, H. Luo, and H. C. Liu)  Appl.Phys.Lett., 89, 141122 (2006) (Full paper in PDF format)

88.         “GaN/AlGaN ultraviolet/infrared dual-band detector” (G. Ariyawansa, M. B. M. Rinzan, M. Alevli, M. Strassburg, N. Dietz , A. G. U. Perera, S. G. Matsik, A. Asghar, I. T. Ferguson, H. Luo, A. Bezinger, and H. C. Liu)  Appl.Phys.Lett., 89, 091113, (2006) (Full paper in PDF format)

87.        “Characteristics of a Si dual-band detector responding in both near- and far-infrared regions (G. Ariyawansa, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, G. Hastings, H. C. Liu, M. Buchanan, G. I. Sproule, V. I. Gavrilenko, and V. P. Kuznetsov)  Appl.Phys.Lett., 89, 061112, (2006) (Full paper in PDF format)

86.        Terahertz detection with tunneling quantum dot intersublevel photodetector" (X.H. Su, J. Yang, P. Bhattacharya, G. Ariyawansa, and A.G. U. Perera) Appl.Phys.Lett., 89, 031117 (2006) (Full paper in PDF format)

85.        “Longitudinal–optical phonon hole plasmon coupled modes in heavily doped p-type GaSb:Zn epitaxial  films” (Z. G. Hu, M. B. M. Rinzan, A. G. U. Perera, M. Zhu, Y. Paltiel, A. Raizman, and A. Sher)  Eur. Phys. J. B., 50, 403-410, (2006) (Full paper in PDF format)

84.        "Grouping behavior of inter-pulse time intervals for triggered pulses in an AlGaAs/InGaAs multilayer structure"
(A. B. Weerasekara, S. G. Matsik, G. S. Cymbalyuk and A. G. U. Perera) Physica D, 215, 159-165, (2006). (Full paper in PDF format)

83.        "Lattice vibrations in hexagonal Ga1–xMnxN epitaxial films on c-plane sapphire substrates by infrared reflectance spectra"
(Z. G. Hu, M. Strassburg, A. Weerasekara, N. Dietz, A. G. U. Perera, M. H. Kane, A. Asghar, and I. T. Ferguson)  Appl. Phys. Lett., 88, 061914, (2006) (Full paper in PDF format)

82.        “Composition dependence of the infrared dielectric function in Si- doped hexagonal AlxGa1-xN films on c-plane sapphire substrates (Z. G. Hu, M.Strassburg, N. Dietz. A.G. U. Perera, A. Asghar, I.T. Ferguson) Phys. Rev. B., 72, 245326, (2005) (Full paper in PDF format)

81.        “Terahertz absorption in AlGaAs films and detection using heterojunctions (M. B. M. Rinzan,  A. G. U. Perera, S. G. Matsik, H. C. Liu, M. Buchanan, G. Von Winckel, A. Stintz, and S. Krishna) Infrared Physics & Technology., 47, 188–194, (2005) (Full paper in PDF format) 

80.        “1/f noise and dye-sensitized solar cells (P. V. V. Jayaweera, P. K. D. D. P. Pitigala, A. G. U. Perera and K. Tennakone) Semicond. Sci. Technol. 20, L40–L42, (2005) (Full paper in PDF format)

79.        “High Performance mid-infrared quantum dot infrared photodetectors (S. Chakrabarti, A D Stiff-Roberts, X Su, P Bhattacharya, G Ariyawansa, and A. G. U. Perera) J. Phys D. Appl. Phys. 38, 2135-2141, (2005) (Full paper in PDF format)

78.        “A Resonant Tunneling Quantum-Dot Infrared Photodetector (Xiaohua Su, Subhananda Chakrabarti, Pallab Bhattacharya, Gamini Ariyawansa, and A. G. U. Perera), IEEE Journal of Quantum Electronics,  41(7), 974-979, (2005) (Full paper in PDF format)

77.        “Zn-Doped GaSb Epitaxial Film Absorption Coefficients at Terahertz Frequencies and Detector Applications (Z. G. Hu, A. G. U. Perera, Y. Paltiel, A. Raizman, & A. Sher), Journal of Applied Physics, 98, 023511, (2005) (Full paper in PDF format)

76.        “Characteristics of a Tunneling Quantum-dot Infrared Photodetector Operating at Room Temperature (P. Bhattacharya, X. H. Su,  S. Chakrabarti,  G. Ariyawansa,  and  A. G. U. Perera), Appl. Phys. Lett, 86, 191106, (2005) (Full paper in PDF format)

75.        “Optical Characterizations of Heavily Doped p-type AlxGa1-xAs and GaAs Epitaxial Films at Terahertz Frequencies (Z. G. Hu, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, G. Von Winckel, A. Stintz, and S. Krishna), Journal of Applied Physics, 97, 093529, (2005) (Full paper in PDF format)

74.        "Near- and Far-Infrared p-GaAs Dual Band Detector(G. Ariyawansa, M.B.M. Rinzan, D. G. Esaev, S. G. Matsik, G. Hastings, A. G. U. Perera, H. C. Liu, B. N. Zvonkov, and V. I. Gavrilenko), Appl. Phys. Lett, 86, 143510, (2005) (Full paper in PDF format)

73.        "AlGaAs emitter/GaAs barrier Terahertz detector with a 2.3 THz threshold,” (M.B.M. Rinzan, A. G. U. Perera, S. G. Matsik, H. C. Liu, Z. Wasilewski and M. Buchanan)  Appl. Phys. Lett, 86, 071112, (2005) (Full paper in PDF format)

72.        "Effect of Well Width on Three Color Quantum Dot-in-a-Well Infrared Detectors” (G. Ariyawansa, A. G. U. Perera, Senior Member, IEEE, G. S. Raghavan, G. von Winckel, A. Stintz, and Sanjay Krishna), IEEE Photonics Tech. Letts, 17, 1064-1066, (2005)   (Full paper in PDF format)

71.        "Effect of Doped Substrate on GaAs/AlGaAs Interfacial Workfunction IR Detector Response through Cavity Effect" (S. G. Matsik, M. B. M. Rinzan, D. G. Esaev, A. G. U. Perera, G. Von Winckel, A. Stintz, and S. Krishna) IEEE Transactions on Electron Devices, 52 (3), 413-418, (2005) (Full paper in PDF format)

70.        "Characteristics of a Multicolor InGaAS--GaAs Quantum-Dot Infrared Photodetector" (S. Chakrabarti, Member, IEEE, X. H. Su, P. Bhattacharya, Fellow, IEEE, G. Ariyawansa, and A.G.U. Perera) IEEE Photonics Technology Letters , 17 (1), 178-180, (2005)  (Full paper in PDF format)

69.        "Dye-sensitized Near-infrared Room-temperature Photovoltaic Photon Detectors" (P.V.V. Jayaweera, A.G.U. Perera, M.K.I. Senevirathna, P.K.D.D.P. Pitigala, and K. Tennakone) Applied Physics Letter, 85 (23), 5754-5756, (2004) (Full paper in PDF format)

68.        "Free Carrier Absorption in Be-doped Epitaxial AlGaAs Thin Films" (M. B. M. Rinzan, D. G. Esaev, A. G. U. Perera, S. G. Matsik, G. Von Winckel, A. Stintz, and S. Krishna) Applied Physics Letter, 85 (22),  5236-5238, (2004) (Full paper in PDF format)

67.        "Design and Optimization of GaAs/AlGaAs Heterojunction Infrared Detectors.(D. G. Esaev, M. B. M. Rinzan, S. G. Matsik, and A. G. U. Perera) Journal of Applied Physics, 96 (8), 4588-4597, (2004) (Full paper in PDF format)

66.        "Construction of a Photovoltaic Device by Deposition of Thin Films of the Conducting Polymer Polythiocyanogen", (V.P.S. Perera,  P.V.V.  Jayaweera,  P.K.D.D.P.  Pitigala,  P.K.M. Bandaranayake,  G. Hastings,  A. G. U. Perera,  K. Tennakone) Synthetic Metals, 143, 283-287, (2004) (Full paper in PDF format)

65.        "High Performance Single Emitter Homojunction Interfacial Workfunction Far Infrared Detectors", (D. G. Esaev, M. B. M.  Rinzan, S. G. Matsik, A. G. U. Perera, H. C. Liu, B. N. Zvonkov , V. I. Gavrilenko and A. A. Belyanin) Journal of Applied Physics, 95 (2), 512-519, (2004) (Full paper in PDF format)

64.        "20  Micron Cutoff Heterojunction Interfacial Work Function Internal Photoemission Detectors", ( S. G. Matsik, M. B. M. Rinzan, D. G. Esaev, A. G. U. Perera, H. C. Liu and M. Buchanan) Applied Physics letters, 84 (18), 3435-3437, (2004) (Full paper in PDF format)

63.        "The Effects of Light–Heavy Hole Transitions on the Cutoff Wavelengths of Far Infrared Detectors", (A. G. U. Perera, S. G. Matsik, M. B. M. Rinzan, A. Weerasekara, M. Alevli, H. C. Liu, M. Buchanan, B. Zvonkov and V. Gavrilenko) Infrared Physics & Technology, 44 (5-6), 347-353, (2003) (Full paper in PDF format)

62.        "Three-color (λ1~3.8  µm, λ1~8.5  µm, and λ1~23.2  µm) InAs/InGaAs quantum-dots-in-a-well detecto", (G. Ariyawansa, S. G. Matsik, A. G. U. Perera, S. Krishna, S. Raghavan, G. von Winckel, and A. Stintz) Applied Physics Letters, 83 (14), 2745-2747, (2003) (Full paper in PDF format)

61.        "Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors", (D. G. Esaev, S. G. Matsik, M. B. M. Rinzan, A. G. U. Perera and H. C. Liu)  Journal of Applied Physics, 93 (4),  1879 ~ 1883,  (2003) (Full paper in PDF format)

60.        "Cutoff tailorability of heterojunction terahertz detectors", ( S. G. Matsik, M. B. M. Rinzan, A. G. U. Perera, H. C. Liu, Z. R. Wasilewski, and M. Buchanan) Appl. Phys. Lett. 82 (1), 139-141,  (2003) (Full paper in PDF format)

59.        Transient Photocurrent Overshoot in Quantum-well Infrared Photodetectors”, (V. Letov, M. Ershov, S.G. Matishik, and A. G. U. Perera) Appl. Phys. Lett. 79 (13), 2094-2096, (2001) (Full paper in PDF format)

58.        "Spontaneous Oscillations and Triggered Pulsing in GaAs/InGaAs Multiquantum Well Structures ", (A. G. U. Perera, S. G. Matsik, V. Y. Letov, H. C. Liu, M. Gao, M. Buchanan, W. J. Schaff) Solid-state Electronics, 45 (7), 1121-1125, (2001) (Full paper in PDF format) 

57.         "35 µm Cutoff Bound-toquasibound and Bound-to-continuum InGaAs QWIPs ", (A. G. U. Perera, S. G. Matsik, H. C. Liu, M. Gao, M. Buchanan, W. J. Schaff, and W. Yeo) Infrared Physics & Technology, 42, 157-162, (2001) (Full paper in PDF format)

56.        "Space Charge Spectroscopy of Intergrated Quantum Well Infrared Photodetector--Light Emitting Diode ", (M. Ershov, B. Yaldiz, A. G. U. Perera, S. G. Matsik, H. C. Liu, M. Buchanan, Z. R. Wasilewski, and M. D. Willams), Infrared Physics & Technology, 42, 259-265, (2001) (Full paper in PDF format) 

55.        “Experimental Observation of Transitent Photocurrent Overshoot in Quantum Well Infrared Photodetectors ", (V. Letov, A. G. U. Perera, M. Ershov, H. C. Liu, M. Buchanan, and Z. R. Wasilewski), Infrared Physics & Technology, 42, 243-247, (2001) (Full paper in PDF format)  

54.        "Chaotic Dynamics in Terahertz-driven Semiconductors with Negative Effective Mass ", (J. C. Cao, H. C. Liu, X. L. Lei, A. G. U. Perera) Physical Review B., 63, 115308, (2001) (Full paper in PDF format)

53.        "Heterojunction Wavelength-Tailorable Far-Infrared Photodetectors with Response out to 70 Microns", ( A. G. U. Perera, S. G. Matsik, B. Yaldiz, H. C. Liu, A. Shen, M. Gao, Z. R. Wasilewski and M. Buchanan), Appl. Phys. Lett., 78, 2241~2243, (2001) (Full paper in PDF format)

52.        "Low Dark Current Far Infrared Detector with an Optical Cavity Architecture", (A. L. Korotkov, A. G. U. Perera, W. Z. Shen, H. C. Liu, M. Buchanan), Solid-State Electronics, 45, 87-93, (2001) (Full paper in PDF format)

51.         "Free-carrier Absorption in Be- and C-doped GaAs Epilayers and Far Infrared Detector Applications", (A. L. Korotkov, A. G. U. Perera, W. Z. Shen, J. Herfort, K. H. Ploog, W. J. Schaff and H. C. Liu), Journal of Applied Physics, 89 (6), 3295~3300, (2001) (Full paper in PDF format)

50.        “GaAs/InGaAs Quantum Well Infrared Photodetector with a Cutoff Wavelength at 35 µm ”, (A. G. U. Perera, S. G. Matsik, H. C. Liu, M. Gao, M. Buchanan, W. J. Schaff and W. Yeo), Applied Physics Letters, 77, 741~743, (2000) (Full paper in PDF format)

49.         GaAs Homojunction Interfacial Workfunction Internal Photoemission (HIWIP) Far-infrared Detectors", (A. G. U. Perera, W. Z. Shen, H. C. Liu, M. Buchanan, and W. J. Schaff), Material Science and Engineering,  B74, 56~60, (2000) (Full paper in PDF format)

48.        "Optical Interference and Nonlinearities in Quantum-well Infrared Photodetectors", (M. Ershov, H.C. Liu, A. G. U. Perera and S. G. Matsik), Physica E, 7,115~119, (2000) (Full paper in PDF format)

47.         "Effect of Interface States on the Performance of GaAs p+ –i Far–infrared Detectors", (A. G. U. Perera,W. Z. Shen and M. Ershov; H. C. Liu and M. Buchanan; S. D. Gunapala, S. V. Bandara, and J. K. Liu; H. H. Ye and W. J. Schaff), JVST A, 18 (2) 597~600, (2000) (Full paper in PDF format)

46.        Effects of Traps on the Dark Current Transients in GaAs/AlGaAs Quantum Well Infrared Photodetectors", ( A. G. U. Perera, S. G. Matsik, M. Ershov, Y. W. Yi, H. C. Liu, M. Buchanan, and Z. R. Wasilewski), Physica E, 7, 130~134, (2000) (Full paper in PDF format)

45.        “Theory of Transient Spectroscopy of Multiple Quantum Well Structures”, (M. Ershov, H. Ruda, A. Shik andA. G. U. Perera), Journal of Applied Physics, 86 (3), 1510-1513, (1999) (Full paper in PDF format)

44.    "GaAs Homojunction Interfacial Workfunction Internal Photoemission (HIWIP) Far-infrared Detectors", (A. G. U. Perera and W. Z. Shen), Journal of the Association of Polish Electrical Engineers, Opto-Electronics Review 7 (3), (1999).

43.        “Negative Capacitance of GaAs Homojunction Far-infrared Detectors”, (A. G. U. Perera, W. Z. Shen, M. Ershov, H. C. Liu, M. Buchanan, and W. J. Schaff), Applied Physics Letters, 74 (21), 3167-3169(1999). (Full paper in PDF format)

42.    “Low-frequency Noise and Interface States in GaAs Homojunction Far-infrared Detectors”, (W. Z. Shen andA. G. U. Perera), IEEE Transactions on Electron Devices, 46 (4), 811-814(1999). (Full paper in PDF format)

41.        "Demonstration of Si homojunction far-infrared detectors ", (A. G. U. Perera, W. Z. Shen, S. G. Matsik, H. C. Liu, M. Buchanan, and W. J. Schaff), Applied Physics Letters, 72 (18),  2307-2309, (1998) (Full paper in PDF format)

40.        "GaAs/AlGaAs Quantum Well Photodetector with 27 micron peak Wavelength", (A. G. U. Perera, W. Z. Shen, S. G. Matsik, H. C. Liu, M. Buchanan, and W. J. Schaff) Applied Physics Letters, 72 (13), 1596-1598, (1998) (Full paper in PDF format)

39.        "Effect of emitter layer concentration on the performance of GaAs p+-i homojunction far-infrared detectors: A comparison of Theory and Experiment" (W. Z. Shen, A. G. U. Perera, M. H. Francombe, H. C. Liu, M. Buchanan and W. J. Schaff) IEEE transactions of Electron Devices, 45 (8), 1671-1677, (1998) (Full paper in PDF format)

38.        "Photoconductivity in homojunction Internal Photoemission Infrared Detectors", (W. Z. Shen and A. G. U. Perera) Infrared Physics and Technology, 39, 329~333, (1998). (Full paper in PDF format)

37.        "Photoconductive Generation Mechanism and Gain in Internal Photoemission Infrared Detectors", (W. Z. Shen and A. G. U. Perera) J. Appl. Phys, 83 (7), 3923-3925, (1998) (Full paper in PDF format)

36.        "Nonuniform vertical Charge Transport and Relaxation in Quantum Well Infrared Detectors", (A. G. U. Perera, V. G. Sylvestrov, S. G. Matsik, H. C. Liu, M. Buchanan, Z. R. Wasilewski and M. Ershov) J. Appl. Phys., 83 (2), 991-997, (1998) (Full paper in PDF format)